1999. 12. 22
1/2
SEMICONDUCTOR
TECHNICAL DATA
2N5401S
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 2
GENERAL PURPOSE APPLICATION.
HIGH VOLTAGE APPLICATION.
FEATURES
High Collector Breakdwon Voltage
: V
CBO
=-160V, V
CEO
=-150V
Low Leakage Current.
: I
CBO
=-50nA(Max.) @V
CB
=-120V
Low Saturation Voltage
: V
CE(sat)
=-0.5V(Max.) @I
C
=-50mA, I
B
=-5mA
Low Noise : NF=8dB (Max.)
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
+
_
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-160
V
Collector-Emitter Voltage
V
CEO
-150
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-600
mA
Base Current
I
B
-100
mA
Collector Power Dissipation
P
C
*
350
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Note : * Package Mounted On 99.5% Alumina 10 8 0.6 )
Type Name
Marking
Lot No.
ZE
1999. 12. 22
2/2
Revision No : 2
ELECTRICAL CHARACTERISTICS (Ta=25 )
2N5401S
* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-120V, I
E
=0
-
-
-50
nA
V
CB
=-120V, I
E
=0, Ta=100
-
-
-50
A
Emitter Cut-off Current
I
EBO
V
EB
=-3V, I
C
=0
-
-
-50
nA
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=-0.1mA, I
E
=0
-160
-
-
V
Collector-Emitter *
Breakdown Voltage
V
(BR)CEO
I
C
=-1mA, I
B
=0
-150
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=-10 A, I
C
=0
-5
-
-
V
DC Current Gain *
h
FE
(1)
V
CE
=-5V, I
C
=-1mA
50
-
-
h
FE
(2)
V
CE
=-5V, I
C
=-10mA
60
-
240
h
FE
(3)
V
CE
=-5V, I
C
=-50mA
50
-
-
Collector-Emitter *
Saturation Voltage
V
CE(sat)
1
I
C
=-10mA, I
B
=-1mA
-
-
-0.2
V
V
CE(sat)
2
I
C
=-50mA, I
B
=-5mA
-
-
-0.5
Base-Emitter *
Saturation Voltage
V
BE(sat)
1
I
C
=-10mA, I
B
=-1mA
-
-
-1.0
V
V
BE(sat)
2
I
C
=-50mA, I
B
=-5mA
-
-
-1.0
Transition Frequency
f
T
V
CE
=-10V, I
C
=-10mA, f=100MHz
100
-
300
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
-
6
pF
Small-Signal Current Gain
h
fe
V
CE
=-10V, I
C
=-1mA, f=1kHz
40
-
200
Noise Figure
NF
V
CE
=-5V, I
C
=-250 A
Rg=1k , f=10Hz 15.7kHz
-
-
8
dB
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